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Reactive Ion Etching System


Reactive Ion Etching System img
 

Product Details :

Reactive Ion Etching System

- ICP Source for High Rate Process
- DRIE – Compound semiconductor materials, metals, Si, SiO2, Si3N4
- Low / No Damage Etch – Vertical Walls
- PECVD – Low Stress, Low Temperature SiO2, Si3N4, SiOxNy
- 1 KW, 13.56 MHz RF ICP Power (optional 3 KW)

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